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| IGBT MODULE ( N series ) n Features * Square RBSOA * Low Saturation Voltage * Less Total Power Dissipation * Improved FWD Characteristic * Minimized Internal Stray Inductance * Overcurrent Limiting Function (~3 Times Rated Current) n Outline Drawing n Applications * High Power Switching * A.C. Motor Controls * D.C. Motor Controls * Uninterruptible Power Supply n Maximum Ratings and Characteristics * Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque ( Tc=25C) Symbols VCES VGES Continuous IC 1ms IC PULSE Continuous -IC 1ms -IC PULSE PC Tj Tstg A.C. 1min. Vis Mounting *1 Terminals *2 Ratings 600 20 50 100 50 100 250 +150 -40 +125 2500 3.5 3.5 Units V V A W C C V Nm n Equivalent Circuit Note: *1:Recommendable Value; 2.5 3.5 Nm (M5) * Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time ( at Tj=25C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=600V VCE=0V VGE= 20V VGE=20V IC=50mA VGE=15V IC=50A VGE=0V VCE=10V f=1MHz VCC=300V IC=50A VGE= 15V RG=51 IF=50A VGE=0V IF=50A Min. Typ. Max. 1.0 15 7.5 2.8 Units mA A V V pF 1.2 0.6 1.0 0.35 3.0 300 4.5 3300 730 330 0.6 0.2 0.6 0.2 s V ns * Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal Compound Min. Typ. Max. 0.50 1.33 Units C/W 0.05 Collector current vs. Collector-Emitter voltage T j=25C 125 V GE = 20V, 15V, 12V 100 100 125 Collector current vs. Collector-Emitter voltage T j=125C V GE = 20V, 15V, 12V, C [A] 75 [A] Collector current : I 10V 75 50 Collector current : I C 10V 50 25 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : V CE [V] 25 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : V CE [V] Collector-Emitter vs. Gate-Emitter voltage T j=25C Collector-Emitter vs. Gate-Emitter voltage T j=125C 10 10 [V] CE 8 CE [V] 8 6 IC= 100A 50A 2 25A 0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [V] Collector-Emitter voltage :V Collector-Emitter voltage V 6 IC= 4 100A 50A 2 25A 0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [V] 4 Switching time vs. Collector current V CC =300V, R G =51 , V GE =15V, T j=25C Switching time vs. Collector current V CC =300V, R G =51 , V GE =15V, Tj=125C 1000 1000 t on t off t on tr tf [nsec] on, t r, t off, t f tr tf 100 on, t r, t off, t f [nsec] 100 t off Switching time : t 10 0 20 40 60 80 Collector current : I C [A] Switching time : t 10 0 20 40 60 80 Collector current : I C [A] Switching time vs. R G V CC =300V, I C =50A, V GE =15V, T j=25C 500 t on Dynamic input characteristics T j=25C 25 V CC =200V [V] 1000 [nsec] t off tr tf 400 300V 400V 20 on, t r, t off, t f Collector-Emitter voltage : V CE 300 15 Switching time : t 100 200 10 100 5 10 10 Gate resistance : R G [ ] 100 0 0 50 100 150 200 250 0 300 Gate charge : Q G [nC] Forward current vs. Forward voltage V GE = O V 125 T j=125C 100 25C Reverse recovery characteristics t rr, I rr vs. I F [nsec] [A] t rr 125C 100 t rr 25C I rr 125C I rr 10 25C rr [A] Reverse recovery current : I 0 1 2 Forward voltage : V F [V] 3 4 75 Forward current : I 50 25 0 0 20 40 60 80 Reverse recovery time :t F rr Forward current : I F [A] Reversed biased safe operating area Transient thermal resistance 500 Diode 400 +V GE =15V, -V GE <15V, T j<125C, R G >51 th(j-c) [C/W] 1 IGBT Collector current : Ic [A] 300 SCSOA (non-repetitive pulse) Thermal resistance : R 200 0,1 100 RBSOA (Repetitive pulse) 0 0,001 0,01 0,1 1 0 100 200 300 400 500 600 Pulse width : PW [sec] Collector-Emitter voltage : V CE [V] Switching loss vs. Collector current V CC=300V, R G =51 , V GE =15V 5 Capacitance vs. Collector-Emitter voltage T j=25C E off 125C 10 E off, E rr [mJ/cycle] 4 C oes , C res [nF] C ies E off 25C 3 on, Switching loss : E 2 Capacitance : C ies , E on 125C 1 C oes C res 0,1 Eon 25C 1 E rr 125C E rr 25C 0 20 40 60 80 0 0 5 10 15 20 25 30 35 Collector Current : I C [A] Collector-Emitter Voltage : V CE [V] Fuji Electric GmbH Lyoner Strae 26 D-60528 Frankfurt/M Tel.: 069 - 66 90 29 - 0 Fax.: 069 - 66 90 29 - 56 Fuji Electric (UK) Ltd. Commonwealth House 2 Chalkhill Road Hammersmith London W6 8DW, UK Tel.: 0181 - 233 11 30 Fax.: 0181 - 233 11 60 Specification is subject to change without notice May 97 |
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